Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer
Chunmeng Dou(Chinese Academy of Sciences), Hiroshi Iwai(Kyoto University), Nobuyuki Sugii(Tokyo Institute of Technology), Akira Nishiyama(Kagawa University), K. Tsutsui(Tokyo Institute of Technology), Takanori Hattori(Musashi University), Kuniyuki Kakushima(Tokyo Institute of Technology), Parhat Ahmet(National Institute for Materials Science), Kenji Natori(Chiba University)
Cited by 45
Related Papers
Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide
|Science|2001|2.5k
Identification of Thioredoxin-binding Protein-2/Vitamin D3 Up-regulated Protein 1 as a Negative Regulator of Thioredoxin Function and Expression
|Journal of Biological Chemistry|1999|729
Conducting Polymer Nanostructures: Template Synthesis and Applications in Energy Storage
|International Journal of Molecular Sciences|2010|348
Possible Contributions of Reactive Oxygen Species and Mitogen-Activated Protein Kinase to Renal Injury in Aldosterone/Salt-Induced Hypertensive Rats
|Hypertension|2004|310
CMOS-integrated memristive non-volatile computing-in-memory for AI edge processors
|Nature Electronics|2019|271