Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability
Yan Wu(Nanjing Forestry University), Hiroshi Iwai(Kyoto University), Nobuyuki Sugii(Tokyo Institute of Technology), Feng Wei(University of Tsukuba), Takanobu Watanabe(Waseda University), Akira Nishiyama(Kagawa University), Kenji Ohmori(Weatherford College), Chunmeng Dou(Chinese Academy of Sciences), Kazuo Tsutsui(Tokyo Institute of Technology), Keisaku Yamada(University of Tsukuba), Takeo Hattori(Tokyo Institute of Technology), Parhat Ahmet(National Institute for Materials Science), Kuniyuki Kakushima(Tokyo Institute of Technology), Yoshinori Kataoka(Tokyo Institute of Technology), Kenji Natori(Chiba University)
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