Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement
Chunmeng Dou(Chinese Academy of Sciences), Hiroshi Iwai(Kyoto University), Tomoya Shoji(Tokyo Institute of Technology), Nobuyuki Sugii(Tokyo Institute of Technology), Hitoshi Wakabayashi(Tokyo Institute of Technology), Akira Nishiyama(Kagawa University), Kazuo Tsutsui(Tokyo Institute of Technology), Kazuhiro Nakajima(Tokyo Institute of Technology), Parhat Ahmet(National Institute for Materials Science), Kuniyuki Kakushima(Tokyo Institute of Technology), Yoshinori Kataoka(Tokyo Institute of Technology), Kenji Natori(Chiba University)
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