On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layersFelice Crupi, H.E. Maes, R. Degraeve et al.|IEEE Transactions on Electron Devices|1998Cited by 97
Constant current charge-to-breakdown: Still a valid tool to study the reliability of MOS structures?T. Nigam, H.E. Maes, R. Degraeve et al.|Unknown|1998Cited by 84
Hot carrier degradation and time-dependent dielectric breakdown in oxidesG. Groeseneken, H.E. Maes, R. Degraeve et al.|Microelectronic Engineering|1999Cited by 67
Temperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliabilityR. Degraeve, A. Naem, N. Pangon et al.|Unknown|1999Cited by 56
Cost-effective cleaning and high-quality thin gate oxidesMarc Heyns, K. Wolke, Twan Bearda et al.|IBM Journal of Research and Development|1999Cited by 48