On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layersFelice Crupi, H.E. Maes, T. Nigam et al.|IEEE Transactions on Electron Devices|1998Cited by 97
Correlation between Stress-Induced Leakage Current (SILC) and the HfO/sub 2/ bulk trap density in a SiO/sub 2//HfO/sub 2/ stackFelice Crupi, G. Groeseneken, R. Degraeve et al.|Unknown|2004Cited by 71
Reliability Comparison of Triple-Gate Versus Planar SOI FETsFelice Crupi, G. Groeseneken, R. Degraeve et al.|IEEE Transactions on Electron Devices|2006Cited by 49
Observation of hot-carrier-induced nFET gate-oxide breakdown in dynamically stressed CMOS circuitsB. Kaczer, G. Groeseneken, Felice Crupi et al.|Unknown|2003Cited by 44
Location and hardness of the oxide breakdown in short channel n- and p-MOSFETsFelice Crupi, G. Groeseneken, B. Kaczer et al.|Unknown|2003Cited by 21