V<sub>t</sub> Fine-Tuning in Multi-V<sub>t</sub> Gate-All-Around Nanosheet nFETs Using Rare-Earth Oxide-Based Dipole-First Gate Stack Compatible with CFET IntegrationHiroaki Arimura, Naoto Horiguchi, T. Chiarella et al.|Unknown|2024Cited by 16
Multi-Vt Gate Stack Technologies for Nanosheet and CFET DevicesHiroaki Arimura, Naoto Horiguchi, J. Franco et al.|Unknown|2024Cited by 4
DRAM-Peri FinFET - A Thermally-Stable High-Performance Advanced CMOS RMG Platform with Mo-Based pWFM for sub-10nm DRAMJhuma Ganguly, Naoto Horiguchi, H. Arimura et al.|Unknown|2024Cited by 2