Dipole-First Gate Stack as a Scalable and Thermal Budget Flexible Multi-Vt Solution for Nanosheet/CFET DevicesHiroaki Arimura, Naoto Horiguchi, RuoFei CHANG et al.|Unknown|2021Cited by 29
V<sub>t</sub> Fine-Tuning in Multi-V<sub>t</sub> Gate-All-Around Nanosheet nFETs Using Rare-Earth Oxide-Based Dipole-First Gate Stack Compatible with CFET IntegrationHiroaki Arimura, Naoto Horiguchi, Hans Mertens et al.|Unknown|2024Cited by 16
Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFETHiroaki Arimura, Naoto Horiguchi, S. Brus et al.|Unknown|2023Cited by 6
Multi-Vt Gate Stack Technologies for Nanosheet and CFET DevicesHiroaki Arimura, Naoto Horiguchi, J. Franco et al.|Unknown|2024Cited by 4
Study on Alternative Dipole Material Wet Clean by pH Controlled Functional WaterYoïchi Tanaka, Naoto Horiguchi, Nobuko Gan et al.|Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena|2023Cited by 0