Threshold Voltage Control in PMOSFETs with Polysilicon or Fully-Silicided Gates on Hf-based gate dielectric using Controlled Lateral Oxidation
Vidya Kaushik, Marc Heyns(IMEC), S. Brus(University of Liège), Matty Caymax(IMEC), E. Röhr(IMEC), A. Veloso(IMEC), Sven Van Elshocht(Columbia University), Lars‐Åke Ragnarsson(IMEC), Sangjin Hyun(Samsung (United States)), S. DeGendt(IMEC), Olivier Richard(IMEC), Jean-Luc Everaert, Annelies Delabie(IMEC)
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