Improvement of data retention in HfO<inf>2</inf>/Hf 1T1R RRAM cell under low operating current

Yang Yin Chen(IMEC), M. Jurczak(IMEC), G. Groeseneken(KU Leuven), A. Redolfi(IMEC), Leqi Zhang(IMEC), A. Fantini(IMEC), Attilio Belmonte(IMEC), Masanori Komura(IMEC), R. Degraeve(IMEC), Nagarajan Raghavan(Singapore University of Technology and Design), B. Govoreanu(IMEC), Gouri Sankar Kar(IMEC), Dirk J. Wouters(IMEC), Ludovic Goux(IMEC), Sergiu Clima(IMEC)
Unknown
December 1, 2013
10.1109/iedm.2013.6724598
Cited by 96

Related Papers

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
|Journal of Applied Physics|2001|772
Recommended Methods to Study Resistive Switching Devices
|Advanced Electronic Materials|2018|649
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
|IEEE Transactions on Electron Devices|1998|647
10×10nm<sup>2</sup> Hf/HfO<inf>x</inf> crossbar resistive RAM with excellent performance, reliability and low-energy operation
|Unknown|2011|611
Origin of the threshold voltage instability in SiO<sub>2</sub>/HfO<sub>2</sub> dual layer gate dielectrics
|IEEE Electron Device Letters|2003|360