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Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating currentYang Yin Chen, M. Jurczak, Masanori Komura et al.|Unknown|2013Cited by 55
Tailoring switching and endurance / retention reliability characteristics of HfO<inf>2</inf> / Hf RRAM with Ti, Al, Si dopantsY. Y. Chen, M. Jurczak, R. Roelofs et al.|Unknown|2014Cited by 32
Understanding of the intrinsic characteristics and memory trade-offs of sub-μA filamentary RRAM operationL. Goux, M. Jurczak, A. Fantini et al.|Unknown|2013Cited by 28
Engineering of Hf<inf>1&#x2212;x</inf>Al<inf>x</inf>O<inf>y</inf> amorphous dielectrics for high-performance RRAM applicationsA. Fantini, M. Jurczak, Ludovic Goux et al.|Unknown|2014Cited by 20