Recommended Methods to Study Resistive Switching DevicesMario Lanza, Tingting Han, H.‐S. Philip Wong et al.|Advanced Electronic Materials|2018Cited by 649
Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory DevicesUmberto Celano, Wilfried Vandervorst, Ludovic Goux et al.|Nano Letters|2014Cited by 338
Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching MemoryUmberto Celano, Wilfried Vandervorst, H. Bender et al.|Nano Letters|2015Cited by 181
Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging DevicesUmberto Celano, Wilfried Vandervorst, Ludovic Goux et al.|The Journal of Physical Chemistry Letters|2015Cited by 71
Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change MemoryUmberto Celano, Wilfried Vandervorst, Jonathan Op de Beeck et al.|ACS Applied Materials & Interfaces|2017Cited by 55