Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches
G. Wang(IMEC), Marc Heyns(IMEC), W. Lee(IMEC), Jason Lin(Apellis Pharmaceuticals (United States)), Wilfried Vandervorst(Imec the Netherlands), Matty Caymax(IMEC), Brice De Jaeger(IMEC), Alain Moussa(IMEC), Shotaro Takeuchi(Fukui Prefectural University), H. Bender(IMEC), Patrick Ong(IMEC), Laurent Souriau(IMEC), Roger Loo(IMEC), Marc Meuris(IMEC), Bart Blanpain(KU Leuven)
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