Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSnFederica Gencarelli, Marc Heyns, Wilfried Vandervorst et al.|ECS Journal of Solid State Science and Technology|2013Cited by 128
Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substratesV. Terzieva, Marc Meuris, Laurent Souriau et al.|Thin Solid Films|2008Cited by 32
Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement techniqueClément Merckling, Wilfried Vandervorst, Niamh Waldron et al.|Journal of Applied Physics|2013Cited by 32
High Ge content SGOI substrates obtained by the Ge condensation technique: A template for growth of strained epitaxial GeLaurent Souriau, Matty Caymax, V. Terzieva et al.|Thin Solid Films|2008Cited by 30
Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenchesG. Wang, Marc Heyns, Roger Loo et al.|Thin Solid Films|2009Cited by 24