Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance–voltage characteristics measured at various temperaturesChunmeng Dou, G. Groeseneken, Hanping Chen et al.|Microelectronics Reliability|2014Cited by 32
Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border trapsAbhitosh Vais, Aaron Thean, H. C. Lin et al.|Applied Physics Letters|2015Cited by 26