Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique
Niamh Waldron, Aaron Thean(National University of Singapore), Gillis Winderickx(IMEC), Matty Caymax(IMEC), Tommaso Orzali(IMEC), Geert Hellings(IMEC), Naoto Horiguchi(IMEC), Geert Eneman(Research Foundation - Flanders), Patrick Ong(IMEC), Ngoc Duy Nguyen(University of Liège), Marc Meuris(IMEC), Clément Merckling(IMEC), Gang Wang(University of Alabama in Huntsville), Guy Brammertz(IMEC)
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