CMOS Integration of Dual Work Function Phase-Controlled Ni Fully Silicided Gates (NMOS:NiSi, PMOS:$\hbox{Ni}_{2}\hbox{Si}$, and $\hbox{Ni}_{31}\hbox{Si}_{12}$) on HfSiON
J. A. Kittl(IMEC), S. Biesemans(IMEC), C. Demeurisse(Imec the Netherlands), S. Brus(University of Liège), Thomas Hoffmann(IMEC), C. Vrancken(IMEC), M. Niwa, Małgorzata Pawlak(IMEC), A. Veloso(IMEC), P. Absil(IMEC), Stefan Kubicek(Austrian Academy of Sciences), M.J.H. van Dal(IMEC), A. Lauwers(IMEC)
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