Tailoring switching and endurance / retention reliability characteristics of HfO<inf>2</inf> / Hf RRAM with Ti, Al, Si dopants
Y. Y. Chen(University of Antwerp), M. Jurczak(IMEC), A. Redolfi(IMEC), D. Crotti(IMEC), A. Fantini(IMEC), Attilio Belmonte(IMEC), Masanori Komura(IMEC), Qiyuan Xie(ASM International (Belgium)), R. Degraeve(IMEC), B. Govoreanu(IMEC), Geoffrey Pourtois(IMEC), L. Zhang(IMEC), R. Roelofs(ASM International (Belgium)), Jan Willem Maes(ASM International (Belgium)), L. Goux(IMEC), Sergiu Clima(IMEC)
Cited by 32
Related Papers
Ultrathin (&lt;4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
|Journal of Applied Physics|2001|772
Recommended Methods to Study Resistive Switching Devices
|Advanced Electronic Materials|2018|649
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
|IEEE Transactions on Electron Devices|1998|647
Origin of the threshold voltage instability in SiO<sub>2</sub>/HfO<sub>2</sub> dual layer gate dielectrics
|IEEE Electron Device Letters|2003|360