Intrinsic Tailing of Resistive States Distributions in Amorphous HfO<sub><italic>x</italic></sub> and TaO<sub><italic>x</italic></sub> Based Resistive Random Access MemoriesSergiu Clima, M. Jurczak, Y. Y. Chen et al.|IEEE Electron Device Letters|2015Cited by 57
Hourglass concept for RRAM: A dynamic and statistical device modelR. Degraeve, M. Jurczak, A. Belmonte et al.|Unknown|2014Cited by 47
Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cellsC. Y. Chen, M. Jurczak, L. Goux et al.|Applied Physics Letters|2015Cited by 46
Tailoring switching and endurance / retention reliability characteristics of HfO<inf>2</inf> / Hf RRAM with Ti, Al, Si dopantsY. Y. Chen, M. Jurczak, R. Roelofs et al.|Unknown|2014Cited by 32
Understanding of the intrinsic characteristics and memory trade-offs of sub-μA filamentary RRAM operationL. Goux, M. Jurczak, A. Fantini et al.|Unknown|2013Cited by 28