Correlation between Stress-Induced Leakage Current (SILC) and the HfO/sub 2/ bulk trap density in a SiO/sub 2//HfO/sub 2/ stack
Felice Crupi(University of Pisa), G. Groeseneken(KU Leuven), R. Degraeve(IMEC), D.H. Kwak(IMEC), A. Kerber(Infineon Technologies (Germany))
Cited by 71
Related Papers
Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
|Journal of Applied Physics|2001|772
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
|IEEE Transactions on Electron Devices|1998|647
Origin of the threshold voltage instability in SiO<sub>2</sub>/HfO<sub>2</sub> dual layer gate dielectrics
|IEEE Electron Device Letters|2003|360