Observation of hot-carrier-induced nFET gate-oxide breakdown in dynamically stressed CMOS circuits
B. Kaczer(IMEC), G. Groeseneken(KU Leuven), C. Ciofi(University of Messina), Ph. Roussel(IMEC), R. Degraeve(IMEC), Felice Crupi(University of Pisa)
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