Charge trapping in SiO2/HfO2 gate dielectrics: Comparison between charge-pumping and pulsed ID–VG
A. Kerber(Infineon Technologies (Germany)), Udo Schwalke(Technische Universität Darmstadt), H.E. Maes(IMEC), G. Groeseneken(KU Leuven), E. Cartier(IBM (United States)), R. Degraeve(IMEC), L. Pantisano(IMEC)
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