Thermal and plasma treatments for improved (sub-)1 nm equivalent oxide thickness planar and FinFET-based replacement metal gate high-k last devices and enabling a simplified scalable CMOS integration schemeA. Veloso, Naoto Horiguchi, Philippe Roussel et al.|Japanese Journal of Applied Physics|2014Cited by 6
The Deposition of Polycrystalline SiGe with Different Ge PrecursorsXiaoping Shi, Deo Shenai, Marc Schaekers et al.|ECS Transactions|2006Cited by 0
Thermal and SF6-plasma treatments for improved (sub-)1nm EOT planar and FinFET-based RMG high-k last devices and enabling a simplified scalable CMOS integration schemeA. Veloso, Naoto Horiguchi, G. Boccardi et al.|Unknown|2013Cited by 0
The Deposition of Polycrystalline SiGe with Different Ge PrecursorsXiaoping Shi, Deo Shenai, Marc Schaekers et al.|ECS Meeting Abstracts|2006Cited by 0