Impact of MOSFET gate oxide breakdown on digital circuit operation and reliabilityB. Kaczer, G. Groeseneken, R. Degraeve et al.|IEEE Transactions on Electron Devices|2002Cited by 259
Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETsMoonju Cho, G. Groeseneken, Philippe Roussel et al.|IEEE Transactions on Electron Devices|2013Cited by 90
Insight Into N/PBTI Mechanisms in Sub-1-nm-EOT DevicesMoonju Cho, G. Groeseneken, Jae-Duk Lee et al.|IEEE Transactions on Electron Devices|2012Cited by 90
Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN ElectrodesA. Kerber, Udo Schwalke, G. Groeseneken et al.|Microelectronic Engineering|2003Cited by 54
Recent trends in reliability assessment of advanced CMOS technologiesG. Groeseneken, Philippe Roussel, R. Degraeve et al.|Unknown|2005Cited by 35