Improving Analog Switching in HfO<sub><italic>x</italic></sub>-Based Resistive Memory With a Thermal Enhanced LayerWei Wu, He Qian, Huaqiang Wu et al.|IEEE Electron Device Letters|2017Cited by 282
Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation TreatmentFang-Yuan Yuan, Simon M. Sze, Ning Deng et al.|Nanoscale Research Letters|2017Cited by 75
Optimization of RRAM-Based Physical Unclonable Function With a Novel Differential Read-Out MethodYachuan Pang, He Qian, Ning Deng et al.|IEEE Electron Device Letters|2017Cited by 58
Resistance Switching Characteristics Induced by O<sub>2</sub> Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access MemoryPo‐Hsun Chen, Simon M. Sze, Ting‐Chang Chang et al.|ACS Applied Materials & Interfaces|2017Cited by 33
Short Time High-Resistance State Instability of TaOx-Based RRAM DevicesXinyi Li, He Qian, Huaqiang Wu et al.|IEEE Electron Device Letters|2016Cited by 28