Improving Analog Switching in HfO<sub>&lt;italic&gt;x&lt;/italic&gt;</sub>-Based Resistive Memory With a Thermal Enhanced Layer

Wei Wu(Institute of Microelectronics), He Qian(University of Science and Technology of China), Bin Gao(Chinese Academy of Sciences), Ning Deng(Fujitsu (China)), Shimeng Yu(Georgia Institute of Technology), Huaqiang Wu(Institute of Microelectronics)
IEEE Electron Device Letters
June 23, 2017
10.1109/led.2017.2719161
Cited by 282

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