Resistance Switching Characteristics Induced by O<sub>2</sub> Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access MemoryPo‐Hsun Chen, Simon M. Sze, Yi‐Ting Tseng et al.|ACS Applied Materials & Interfaces|2017Cited by 33
Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3:ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influenceChih-Hung Pan, Simon M. Sze, Ting‐Chang Chang et al.|Applied Physics Letters|2016Cited by 28
Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium–Tin-Oxide ElectrodeChih-Hung Pan, Simon M. Sze, Ting‐Chang Chang et al.|IEEE Transactions on Electron Devices|2016Cited by 18
Controlling the Degree of Forming Soft-Breakdown and Producing Superior Endurance Performance by Inserting BN-Based Layers in Resistive Random Access MemoryTsung‐Ming Tsai, He Qian, Cheng-Hsien Wu et al.|IEEE Electron Device Letters|2017Cited by 12