Short Time High-Resistance State Instability of TaOx-Based RRAM Devices

Xinyi Li(Institute of Microelectronics), He Qian(University of Science and Technology of China), Bin Gao(Chinese Academy of Sciences), Ning Deng(Fujitsu (China)), Huaqiang Wu(Institute of Microelectronics)
IEEE Electron Device Letters
November 17, 2016
10.1109/led.2016.2630044
Cited by 28

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