Characterizing Endurance Degradation of Incremental Switching in Analog RRAM for Neuromorphic SystemsMeiran Zhao, He Qian, Shimeng Yu et al.|Unknown|2018Cited by 70
Resistive Switching Performance Improvement of ${\rm Ta}_{2}{\rm O}_{5-x}/{\rm TaO}_{y}$ Bilayer ReRAM Devices by Inserting ${\rm AlO}_{\delta}$ Barrier LayerHuaqiang Wu, He Qian, Xinyi Li et al.|IEEE Electron Device Letters|2013Cited by 62
Stable self-compliance resistive switching in AlO<sub><i>δ</i></sub>/Ta<sub>2</sub>O<sub>5−<i>x</i></sub>/TaO<sub><i>y</i></sub>triple layer devicesHuaqiang Wu, He Qian, Xinyi Li et al.|Nanotechnology|2014Cited by 41
Short Time High-Resistance State Instability of TaOx-Based RRAM DevicesXinyi Li, He Qian, Huaqiang Wu et al.|IEEE Electron Device Letters|2016Cited by 28
Neuromorphic Computing based on Resistive RAMZixuan Chen, He Qian, Bin Gao et al.|Unknown|2017Cited by 9