Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment

Fang-Yuan Yuan(Institute of Microelectronics), Simon M. Sze(National Yang Ming Chiao Tung University), Ting‐Chang Chang(National Sun Yat-sen University), Kuan‐Chang Chang(National Taipei University of Technology), Minghui Wang, Chih‐Cheng Shih(National Sun Yat-sen University), Wen‐Chung Chen, Huaqiang Wu(Institute of Microelectronics), Yi‐Ting Tseng(National Sun Yat-sen University), He Qian(University of Science and Technology of China), Ning Deng(Fujitsu (China))
Nanoscale Research Letters
October 26, 2017
Cited by 75


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