Resistance Switching Characteristics Induced by O<sub>2</sub> Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory
Po‐Hsun Chen(National Sun Yat-sen University), Simon M. Sze(National Yang Ming Chiao Tung University), Min-Chen Chen(National Sun Yat-sen University), Hui‐Chun Huang(National Sun Yat-sen University), Tsung‐Ming Tsai(National Sun Yat-sen University), Kuan‐Chang Chang(National Taipei University of Technology), Chih‐Yang Lin(National Sun Yat-sen University), He Qian(University of Science and Technology of China), Huaqiang Wu(Institute of Microelectronics), Yi‐Ting Tseng(National Sun Yat-sen University), Chih-Hung Pan(National Sun Yat-sen University), Ning Deng(Fujitsu (China)), Yu‐Ting Su(China Medical University), Ting‐Chang Chang(National Sun Yat-sen University)
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