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Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistorsJaechul Park, Youngsoo Park, Ihun Song et al.|Applied Physics Letters|2008Cited by 112
Source/Drain Series-Resistance Effects in Amorphous Gallium–Indium Zinc-Oxide Thin Film TransistorsJaechul Park, Youngsoo Park, Changjung Kim et al.|IEEE Electron Device Letters|2008Cited by 98
Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layerHuaxiang Yin, Youngsoo Park, Sunil Kim et al.|Applied Physics Letters|2008Cited by 91