High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivationJaechul Park, Youngsoo Park, Sang‐Wook Kim et al.|Applied Physics Letters|2008Cited by 134
Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistorsJaechul Park, Youngsoo Park, Changjung Kim et al.|Applied Physics Letters|2008Cited by 112
Source/Drain Series-Resistance Effects in Amorphous Gallium–Indium Zinc-Oxide Thin Film TransistorsJaechul Park, Youngsoo Park, Changjung Kim et al.|IEEE Electron Device Letters|2008Cited by 98
Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layerHuaxiang Yin, Youngsoo Park, Sunil Kim et al.|Applied Physics Letters|2008Cited by 91
Short Channel Characteristics of Gallium–Indium–Zinc–Oxide Thin Film Transistors for Three-Dimensional Stacking MemoryIhun Song, Young-Soo Park, Sunil Kim et al.|IEEE Electron Device Letters|2008Cited by 85