Source/Drain Series-Resistance Effects in Amorphous Gallium–Indium Zinc-Oxide Thin Film Transistors
Jaechul Park(Samsung (South Korea)), Youngsoo Park(Samsung (South Korea)), Sunil Kim(Hanyang University), Huaxiang Yin(Chinese Academy of Sciences), Eunha Lee(Samsung (South Korea)), Kee-Won Kwon(Sungkyunkwan University), Ranju Jung(Samsung (South Korea)), Sang‐Wook Kim(Seoul National University), Dong‐Hun Kang(Samsung (South Korea)), Ihun Song(Samsung (South Korea)), Jae-Cheol Lee(Samsung (South Korea)), Hyuck Lim(Samsung (South Korea)), Changjung Kim(Samsung (South Korea))
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