Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors
Jaechul Park(Samsung (South Korea)), Youngsoo Park(Samsung (South Korea)), Changjung Kim(Samsung (South Korea)), Kyoung-Kok Kim(Samsung (South Korea)), Sunil Kim(Hanyang University), Huaxiang Yin(Chinese Academy of Sciences), Eunha Lee(Samsung (South Korea)), Kee-Won Kwon(Sungkyunkwan University), Sang‐Wook Kim(Seoul National University), Hyung-Ik Lee(Samsung (South Korea)), Ihun Song(Samsung (South Korea)), Jae-Cheol Lee(Samsung (South Korea))
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