Low‐Temperature‐Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High‐Density Non‐volatile Memory
Myoung‐Jae Lee(Samsung (South Korea)), Youngsoo Park(Samsung (South Korea)), Ki H. Kim(National Institute on Aging), Yeon H. Kim(Samsung (South Korea)), Seok J. Chung(Samsung (South Korea)), Jae C. Park(Samsung (South Korea)), Huaxiang Yin(Chinese Academy of Sciences), Sang Woon Kim(Samsung (South Korea)), Chang B. Lee(Samsung (South Korea)), Seung‐Eon Ahn(Samsung (South Korea)), Jung H. Lee(Samsung (South Korea)), Ihun Song(Samsung (South Korea)), Sun I. Kim(Samsung (South Korea)), Chang J. Kim(Samsung (South Korea)), Г. Б. Стефанович(Samsung (South Korea)), Bo Soo Kang(Samsung (South Korea))
Cited by 219
Related Papers
Therapeutic B-cell depletion reverses progression of Alzheimer’s disease
|Nature Communications|2021|198
Fully integrated multi-mode optoelectronic memristor array for diversified in-sensor computing
|Nature Nanotechnology|2024|153
New structure transistors for advanced technology node CMOS ICs
|National Science Review|2024|136
High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation
|Applied Physics Letters|2008|134
Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors
|Applied Physics Letters|2008|112