Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer
Huaxiang Yin(Chinese Academy of Sciences), Youngsoo Park(Samsung (South Korea)), Sunil Kim(Hanyang University), Ihun Song(Samsung (South Korea)), Chang Jung Kim(Samsung (South Korea)), Sang‐Wook Kim(Seoul National University), Jaechul Park(Samsung (South Korea))
Cited by 91
Related Papers
Fabrication of Hollow Palladium Spheres and Their Successful Application to the Recyclable Heterogeneous Catalyst for Suzuki Coupling Reactions
|Journal of the American Chemical Society|2002|1.4k
Low‐Temperature‐Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High‐Density Non‐volatile Memory
|Advanced Functional Materials|2008|219
Fully integrated multi-mode optoelectronic memristor array for diversified in-sensor computing
|Nature Nanotechnology|2024|153
New structure transistors for advanced technology node CMOS ICs
|National Science Review|2024|136
High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation
|Applied Physics Letters|2008|134