High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation
Jaechul Park(Samsung (South Korea)), Youngsoo Park(Samsung (South Korea)), Kyoung-Kok Kim(Samsung (South Korea)), Sunil Kim(Hanyang University), Huaxiang Yin(Chinese Academy of Sciences), Eunha Lee(Samsung (South Korea)), Kee-Won Kwon(Sungkyunkwan University), Ki‐Ha Hong(Samsung (South Korea)), Sang‐Wook Kim(Seoul National University), Sunghoon Lee(Japan Science and Technology Agency), Ihun Song(Samsung (South Korea)), Jae-Cheol Lee(Samsung (South Korea)), Jaekwan Jung(Samsung (South Korea)), Changjung Kim(Samsung (South Korea))
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