Short Channel Characteristics of Gallium–Indium–Zinc–Oxide Thin Film Transistors for Three-Dimensional Stacking Memory
Ihun Song(Samsung (South Korea)), Young-Soo Park(Samsung (South Korea)), Hyuk Choi(Samsung (South Korea)), Eunha Lee(Samsung (South Korea)), Jaechul Park(Samsung (South Korea)), Sang‐Wook Kim(Seoul National University), Sunil Kim(Hanyang University), Chang Jung Kim(Samsung (South Korea)), Huaxiang Yin(Chinese Academy of Sciences)
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