Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates
V. Terzieva(IMEC), Marc Meuris(IMEC), Matty Caymax(IMEC), A. Satta(IMEC), Alain Moussa(IMEC), Laurent Souriau(IMEC), Sven Van Elshocht(Columbia University), Roger Loo(IMEC), D.P. Brunco(Imec the Netherlands), Francesca Clemente(University of Florence)
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