Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique
Clément Merckling(IMEC), Wilfried Vandervorst(Imec the Netherlands), Weiming Guo(Université Européenne de Bretagne), Nadine Collaert(IMEC), Aaron Thean(National University of Singapore), Matty Caymax(IMEC), Alain Moussa(IMEC), Danielle Vanhaeren(IMEC), Shidong Jiang(IMEC), Niamh Waldron, H. Bender(IMEC), Bastien Douhard(IMEC), M. M. Heyns(IMEC), Olivier Richard(IMEC)
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