Dipole-First Gate Stack as a Scalable and Thermal Budget Flexible Multi-Vt Solution for Nanosheet/CFET DevicesHiroaki Arimura, Naoto Horiguchi, Lars‐Åke Ragnarsson et al.|Unknown|2021Cited by 29
Low temperature source/drain epitaxy and functional silicides: essentials for ultimate contact scalingClément Porret, Naoto Horiguchi, J.-L. Everaert et al.|2022 International Electron Devices Meeting (IEDM)|2022Cited by 19
Low thermal budget PBTI and NBTI reliability solutions for multi-Vth CMOS RMG stacks based on atomic oxygen and hydrogen treatmentsJ. Franco, B. Kaczer, H. Arimura et al.|2022 International Electron Devices Meeting (IEDM)|2022Cited by 11
FinFETs with Thermally Stable RMG Gate Stack for Future DRAM Peripheral CircuitsE. Capogreco, Naoto Horiguchi, Hiroaki Arimura et al.|2022 International Electron Devices Meeting (IEDM)|2022Cited by 10
Novel Low Thermal Budget CMOS RMG: Performance and Reliability Benchmark Against Conventional High Thermal Budget Gate Stack SolutionsJ. Franco, Naoto Horiguchi, Hiroaki Arimura et al.|Unknown|2023Cited by 8