Work function engineering by FUSI and its impact on the performance and reliability of oxynitride and Hf-silicate based MOSFETsA. Veloso, S. Bieseinans, A. Lauwers et al.|Unknown|2005Cited by 15
FinFETs and Their FuturesNaoto Horiguchi, S. Biesemans, Bertrand Parvais et al.|Engineering materials|2011Cited by 6
Capping-metal gate integration technology for multiple-V<inf>T</inf> CMOS in MuGFETsA. Veloso, M. Jurczak, L. Witters et al.|Unknown|2008Cited by 3
Characteristics and Integration Challenges of FinFET-based Devices for (Sub-)22nm Technology Nodes Circuit ApplicationsA. Veloso, R.J.P. Lander, M.J.H. van Dal et al.|Unknown|2009Cited by 2