Analytical Percolation Model for Predicting Anomalous Charge Loss in Flash MemoriesR. Degraeve, G. Tempel, M. vanDuuren et al.|IEEE Transactions on Electron Devices|2004Cited by 90
Analytical model for failure rate prediction due to anomalous charge loss of flash memoriesR. Degraeve, G. Tempel, F. Schuler et al.|Unknown|2002Cited by 38
A new quantitative model to predict SILC-related disturb characteristics in flash E/sup 2/PROM devicesJ. De Blauwe, H.E. Maes, Jan Van Houdt et al.|Unknown|2002Cited by 33
Physical description of anomalous charge loss in floating gate based NVM's and identification of its dominant parameterF. Schuler, D. Wellekens, R. Degraeve et al.|Unknown|2003Cited by 32
Statistical model for stress-induced leakage current and pre-breakdown current jumps in ultra-thin oxide layersR. Degraeve, G. Groeseneken, B. Kaczer et al.|Unknown|2002Cited by 25