Understanding of Tunable Selector Performance in Si-Ge-As-Se OTS Devices by Extended Percolation Cluster Model Considering Operation Scheme and Material Design
Shoichi Kabuyanagi, Gouri Sankar Kar(IMEC), Sergiu Clima(IMEC), W. G. Kim(Applied Materials (United States)), Mahendra Pakala(Applied Materials (United States)), A. Fantini(IMEC), D. Cellier(Material (Belgium)), Romain Delhougne(IMEC), R. Degraeve(IMEC), Gabriele Luca Donadio(IMEC), Daniele Garbin(IMEC), L. Goux(IMEC), Andrew Cockburn(Material (Belgium)), Michinori Suzuki, Wouter Devulder(IMEC)
Cited by 26
Related Papers
Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
|Journal of Applied Physics|2001|772
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
|IEEE Transactions on Electron Devices|1998|647
Origin of the threshold voltage instability in SiO<sub>2</sub>/HfO<sub>2</sub> dual layer gate dielectrics
|IEEE Electron Device Letters|2003|360