FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>
Zhaohao Zhang(University of Chinese Academy of Sciences), Tianchun Ye(University of Chinese Academy of Sciences), Huaxiang Yin(Chinese Academy of Sciences), Qingzhu Zhang(Hebei University of Technology), Zhenhua Wu(University of Chinese Academy of Sciences), Zhenzhen Kong(First Affiliated Hospital of Guangzhou Medical University), Zhaozhao Hou(University of Chinese Academy of Sciences), Gaobo Xu(University of Chinese Academy of Sciences), Yongkui Zhang(Chinese Academy of Sciences), Junjie Li(University of Chinese Academy of Sciences), Qiuxia Xu(University of Chinese Academy of Sciences), Huilong Zhu(University of Chinese Academy of Sciences), Jinjuan Xiang(University of Chinese Academy of Sciences)
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