FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>Zhaohao Zhang, Tianchun Ye, Qiuxia Xu et al.|IEEE Electron Device Letters|2019Cited by 80
Vertical Sandwich Gate-All-Around Field-Effect Transistors With Self-Aligned High-k Metal Gates and Small Effective-Gate-Length VariationXiaogen Yin, Tianchun Ye, Yongkui Zhang et al.|IEEE Electron Device Letters|2019Cited by 78
Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets DevicesQingzhu Zhang, Jun Luo, Jie Gu et al.|Nanomaterials|2021Cited by 71
β‐arrestin1‐medieated inhibition of FOXO3a contributes to prostate cancer cell growth in vitro and in vivoZhenzhen Kong, Xiaolu Duan|Cancer Science|2018Cited by 19