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Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets DevicesQingzhu Zhang, Jun Luo, Jie Gu et al.|Nanomaterials|2021Cited by 71
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Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming ProcessQingzhu Zhang, Tianchun Ye, Huaxiang Yin et al.|IEEE Electron Device Letters|2018Cited by 51