Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime
J. Kedzierski(University of California, Berkeley), Chenming Hu(Semiconductor Manufacturing International (Italy)), Jeffrey Bokor(University of California, Berkeley), Peng-Yao Xuan(University of California, Berkeley), Tsu-Jae King(University of California, Berkeley), Erik H. Anderson
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