Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric

Yee‐Chia Yeo(National University of Singapore), T.P. Ma(Yale University), Qiang Lü(University of California, Berkeley), Xiewen Wang(Yale University), Chenming Hu(Semiconductor Manufacturing International (Italy)), Wen-Chin Lee(Intel (United States)), Tsu‐Jae King(University of California, Berkeley), Xin Guo(Advanced Micro Devices (Canada))
IEEE Electron Device Letters
November 1, 2000
10.1109/55.877204
Cited by 171

Related Papers

Hot-Electron-Induced MOSFET Degradation - Model, Monitor, and Improvement
|IEEE Journal of Solid-State Circuits|1985|342
Electronic band structures and effective-mass parameters of wurtzite GaN and InN
|Journal of Applied Physics|1998|304
5nm-gate nanowire FinFET
|Unknown|2004|249
A comparative study of advanced MOSFET concepts
|IEEE Transactions on Electron Devices|1996|239
Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime
|Unknown|2002|214