Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric
Yee‐Chia Yeo(Agency for Science, Technology and Research), T.P. Ma(Yale University), Qiang Lü(University of California, Berkeley), Xiewen Wang(Yale University), Chenming Hu(National Yang Ming Chiao Tung University), Wen-Chin Lee(Intel (United States)), Tsu‐Jae King(University of California, Berkeley), Xin Guo(Advanced Micro Devices (Canada))
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