Threshold voltage control in polysilicon or fully-silicided-Hf-based gate dielectric pMOSFETs using controlled lateral oxidation
Vidya Kaushik, Marc Heyns(IMEC), S. Brus(University of Liège), Matty Caymax(IMEC), E. Röhr(IMEC), Stefan De Gendt(Imec the Netherlands), A. Veloso(IMEC), Sven Van Elshocht(Columbia University), Lars‐Åke Ragnarsson(IMEC), Sangjin Hyun(Samsung (United States)), Olivier Richard(IMEC), Jean-Luc Everaert, Annelies Delabie(IMEC)
ECS Transactions
January 1, 2005
Cited by 0
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